Impact of evolution of structural defects on the ferromagnetic and electrical properties of laser deposited Indium-doped SnO2 thin films

Abstract

Impact of non-magnetic cationic-substitution on the evolution of structural defects and correlated ferromagnetic and electrical properties are investigated in series of pulsed laser deposited Sn1-xInxO2 (0.0 ≤ x ≤ 0.12) thin films. Beyond the nominal doping concentration of 2 at.% (i.e. x > 0.02), Indium (In)-doped SnO2 film switches to exhibit from n-type to p-type electrical conductivity and simultaneously the magnetization (MS) as well as the Curie temperature (TC) of the films increase significantly. Estimated values of ‘MS’ and ‘TC’ are found to achieve as large as 15.21 emu/cm3 and 540 K respectively when In-doping concentration approaches towards x = 0.08 and afterwards tend to decrease abruptly. Various spectroscopic techniques including Positron Annihilation Lifetime Spectroscopy (PALS) have detected the existence of Sn vacancy (VSn) defects within Sn1-xInxO2 films arise as the effect of In-substitution at Sn site (InSn) under O-rich atmosphere. The estimated positron lifetimes and the increase of line-shape S-parameter confirm the rise of VSn defects which serve as the major source of magnetic moments in non-magnetic host SnO2. Besides, InSn defects introduce excess holes within SnO2 lattice and thereby the magnetic spin-spin RKKY interaction between near-by VSn defects are mediated ferromagetically through the localized holes. For x > 0.08, stabilization of various donor-type defects such as Sn interstitial (Sni), indium interstitial (Ini) actually compensates the acceptors that leads to reduce the effective hole density consequently diminishing the strength of ferromagnetism within SnO2. Hence, tuning of such ferromagnetic and semiconducting properties through non-magnetic cationic substitution in transparent conducting oxides can be very promising in the field of next-generation spintronics.