Abstract
The current transport properties and resistance-switching (RS) behavior at platinum/niobium-doped strontium-titanate (Pt/NSTO) Schottky junctions were investigated for junctions with different degrees of oxidation (PtOx) in the Schottky electrode. It was found that the rectifying current-voltage (I–V) profile strongly depends on the heat-treatment of the NSTO crystal and oxidation of the Pt electrode. The hysteresis in the I–V relationships was larger for the PtOx/NSTO junction than for the pure Pt/NSTO junction, and heat-treatment of the NSTO crystal suppresses the hysteresis in I-V and increases the leakage current. The change in the rectifying I–V profiles can be reasonably explained by the increase in the built-in potential caused by partial oxidation of the electrode interface, as determined by soft X-ray photoemission spectroscopy. The experimental results indicate that control of the built-in potential and the partial oxidation of the electrode, which affects the homogeneity of the potential profile, is the key to improving and controlling the rectification and RS properties in Pt/NSTO junctions.
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