Abstract
We report here the influence of Mg and Si-doping during growth, on the morphology, structure, and optical properties of single-crystalline GaN nanorods (NRs) grown on Si substrates using plasma-assisted molecular beam epitaxy. Mg-doping is shown to enhance the lateral growth of the NRs, leading to a higher degree of coalescence. Si-doping during the nucleation stage of the growth enhances the mutual misorientation of the NRs. Strain profile measurements along the length of individual NR by transmission electron microscopy shows that the top regions are relaxed. Evaluation of carrier concentration by Raman spectroscopy reveals that Si-doping leads to an increase of carrier concentration from 1016 to 1017 cm−3, and the optimal Mg incorporation for the realisation of p-doping is confirmed by photoluminescence spectroscopy. These results will significantly help in understanding and tuning the structural and optical properties of GaN NRs through doping in the fabrication of NR based optoelectronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
