Abstract
An analytical model based on charge control approach which is followed for analyzing the effect of thickness of the donor layer, dopants concentration in the donor layer and gate-width on the net gate-capacitance of AlGaN/GaN based double heterostructure (DH) high electron mobility transistor (HEMT) is presented in this paper. It has been observed that with reduction in the donor layer thickness and simultaneous increase in concentration of the dopants in the donor layer and gate-width; net gate-capacitance increases more in DH-HEMT due to two 2DEG formation as compared to a single 2DEG formation in single heterostructure (SH)-HEMT. To prove the validity of the analytical model, variation in gate capacitances with gate-source and drain-source voltage obtained analytically were verified with the variations obtained through ATLAS-2D device simulation.
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