Impact of Device Scaling on VCOs Phase Noise in SiGe HBTs

Abstract

The performance of the electronic system strongly depends on the speed of devices, and technological scaling has driven this momentum towards achieving faster speed and high level of integration. Device scaling has been the principal driving force behind the technological innovations and breakthrough of the past half-century. This paper investigates the impact of device scaling on oscillator/VCO noise in SiGe HBTs, which have recently emerged as a strong contender for RF and mixed signal applications. Higher cost barrier for SiGe BiCMOS has created a general perception that CMOS architecture and circuits are the cheapest solutions for RF applications. Meanwhile, optimization of process modules in SiGe BiCMOS is improving the performance and functional density for RF and mixed-signal products, while enabling the integration of functions that are beyond the reach of leading edge CMOS