Impact of Design on High-Frequency Performance of Advanced MIM Capacitors Using Si$_{3}$N$_{4}$ Dielectric Layers

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> High-frequency characterizations of ultra thin 32 nm PECVD Si<formula formulatype="inline"><tex Notation="TeX">$_{3}$</tex></formula>N<formula formulatype="inline"> <tex Notation="TeX">$_{4}$</tex></formula> dielectric in an advanced metal–insulator–metal (MIM) capacitors are presented, with focus on the impact of design on the performance of MIM capacitors. Frequency dependent capacitance has been extracted over a wide range of frequency bandwidth. An equivalent model circuit of capacitors including four parameters was developed to explain this behavior. The results have been compared with the values obtained from a 3-D electromagnetic modeling. A specific chart has been introduced to predict the electrical performance of new MIM capacitor designs. </para>