Abstract
The impact of the deposition parameters such as gas flow (sccm) and RF plasma power density (W/cm2) on the deposition rate of a-Si:H films is systematically investigated. A high deposition rate of up to 146 nm/min at 13.56 MHz is achieved for the a-Si:H films deposited with high lateral uniformity on 30 × 40 cm2 large-area glass substrates. A relationship between the SiH4 gas flow and the RF power density is established. The SiH4 gas flow to RF power density ratio of about 2.4 sccm/mW cm-2 is found to give a linear increase in the deposition rate. The influence of the deposition rate on the material quality is studied using UV-VIS-NIR spectrophotometer and Raman characterisation techniques. Poly-Si thin film with crystal quality as high as 90% of single-crystalline Si wafer is obtained from the SPC of high rate deposited a-Si:H films.
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