Abstract
The impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities were examined by a method that utilizes Hall effect measurements and split capacitance–voltage measurements to clarify the mechanism of high field-effect mobilities in SiO2/4H-SiC and . The characterization results show that high field-effect mobilities in nitrided SiO2/4H-SiC and are caused by both lower interface trap densities near the conduction band edge and higher Hall mobilities compared to those in nitrided SiO2/4H-SiC (0001) and .
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