Abstract
The subband structure in thin silicon films under stress is rigorously analyzed. Calculations of the effective masses in the subbands show a dependence on shear strain and film thickness simultaneously. Both, the effective masses and the subband splitting determine the transport properties in silicon films. A decrease of the transport effective mass controlled by the shear strain component leads to a mobility enhancement even in ultra-thin silicon films. This increase of mobility and thus drive current combined with the improved channel control makes multi-gate MOSFETs based on thin films preeminent candidates for the 22nm technology node and beyond.
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