Abstract
Previous experimental studies have shown qualitative dependence of transport property of graphene nanoribbons on external charged impurities. We have measured transport properties of a graphene nanoribbon at increasing coverage of charged impurities in an ultra high vacuum environment. We discovered an exact relationship between the source-drain and gate gaps at increasing charged impurity density. In addition, we found that graphene nanoribbons have different electronic screening as compared to bulk graphene. Our study paves the way for controlling transport property of nanoribbons using extrinsic impurities.
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