Impact of channel orientation on low frequency noise performances of UTBOX nMOSFETs operated at liquid nitrogen temperature

B Nafaa,E Simoen,N Ismail,B Cretu,O Touayar

doi:10.1109/icnf.2017.7985964

Impact of channel orientation on low frequency noise performances of UTBOX nMOSFETs operated at liquid nitrogen temperature

B Nafaa, E Simoen + Show 3 more

https://doi.org/10.1109/icnf.2017.7985964

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Publication Date: Jun 1, 2017

Citations: 1

Affiliation: University of Carthage, National Institute of Applied Science and Technology, Université de Caen Normandie, Ghent University, IMEC

#Impact Of Channel Orientation #Channel Orientation + Show 8 more

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Abstract

Low frequency noise is investigated in n-type UTBOX transistors presenting different channel orientations (standard μ100ξ and rotated μ110ξ). It was observed that decreasing temperature reduces the 1/f noise level particularly for a short rotated device. However, unexpected variation of the flicker noise in strong inversion was observed for the long rotated channel. Furthermore, evolution of generation-recombination noise as a function of temperature is investigated to identify traps and evaluate the quality of the Si film.

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