Impact of channel doping engineering on the high-frequency noise performance of junctionless In0.3Ga0.7As/GaAs FET: A numerical simulation study

Abstract

Abstract In this paper, the channel doping engineering is proposed to improve the benchmarking parameters of the analog/radio frequency and the high frequency noise performance of the junctionless (JL)-In0.3Ga0.7As/GaAs device. The proposed structure is called shell doped of channel-JLFET (SDCh-JLFET). The sub-gate doped layer thickness (D) and middle of channel impurity concentration (Nmiddle) are considered as additional factors to improve the analog/radio frequency parameters and high frequency noise performance of device. The SDCh-JLFET with a channel length of 10 nm, D = 1 nm, and Nmiddle = 2 × 1017cm−3 showed the transconductance of Gmmax = 3mS/um, unity gain cut-off frequency of fT = 700 GHz, the minimum noise figure of Nfmin = 0.84 db and available associated gain of Gass = 28.5 db. The Gmmax, fT, Nfmin and Gass parameters of the SDCh-JLFET device are improved by 76%, 36%, 35% and 26%, respectively, compared to JL-In0.3Ga0.7As/GaAs device without shell doping (JLFET) but with similar dimensions. The SDCh-JLFET device proposed in this paper can be a reasonable candidate for analog/radio frequency applications and high frequency noise.