Abstract
We measured neutron-induced Single Event Upsets (SEUs) and Multiple Cell Upsets (MCUs) on Flip-Flops (FFs) in a 65 nm bulk CMOS process. Measurement results show that MCU / SEU is up to 23.4% and is exponentially decreased by the distance between latches on FFs. MCU rates can drastically be reduced by inserting well-contact arrays between FFs. The number of MCUs is reduced from 110 to 1 by inserting a well-contact array under power and ground rails.
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