Abstract
GaAs-based vertical-cavity surface-emitting lasers (VCSELs) are commonly used as light sources for optical interconnects in short-range systems. Here, we analyse the impact of the cavity Q factor and the number of quantum wells in the active region on the small-signal modulation response of a GaAs-based VCSEL. By tuning the reflectivity of the mirror it is possible to obtain flat response curves with a high −3 dB bandwidth. It is also beneficial to increase the number of quantum wells in the active region.
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