Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Chengjun Shen,Jose Ortiz-Gonzalez,Olayiwola Alatise,Saeed Jahdi,Juefei Yang,Phil Mellor,Ruizhu Wu

doi:10.1109/ojies.2022.3143946

Chengjun Shen, Jose Ortiz-Gonzalez + Show 5 more

Open Access

https://doi.org/10.1109/ojies.2022.3143946

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Abstract

The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV and high operating temperatures. In this paper, the advantages of the 4H-SiC NPN BJTs in terms of switching transients and current gain over their silicon counterparts is illustrated by means of extensive experimental measurements and modelling, including investigation of high level injection, as a common phenomenon in bipolar devices that influences the switching rates and DC current gain. The two device types have been tested at 800 V with maximum temperature of 175 °C and maximum collector current of 8 A. The turn-ON and turn-OFF transition in Silicon BJT is seen to be much slower than that of the SiC BJT while the transient duration will increase with increasing temperature and decreases with larger collector currents. The common-emitter current gain of SiC BJT is also found to be much higher than silicon counterparts, increasing with temperature in low injection levels but decreasing in higher injection levels in both devices. The rate of increase of current gain slows down toward stability as the collector current increases, known as the high-level injection. Current sharing imbalance among parallel connected devices is also investigated, which are shown to be evidently dependant on temperature and base resistance in Silicon BJT, while the current collapse in also seen in SiC BJT at high injection levels with high base resistance. The turn-OFF delay is seen to be temperature dependant in single and paralleled Silicon BJTs while almost non-existent in SiC device.

Highlights

Silicon bipolar junction transistors (BJTs) have been in use for over half of a century
This paper demonstrates the performances of 4H-SiC BJTs compared with the silicon BJTs, with analysis of switching transients and current gain in a wide range of temperatures (25 °C to 175 °C) and collector current (1 A to 8 A)
The DC current gain is found to increase with increasing collector current in both devices at low injection levels, whereas its temperature dependence is flips at higher injection levels due to the impact of holes injected into the base and emitter region and increased recombination rate

Summary

INTRODUCTION

Silicon bipolar junction transistors (BJTs) have been in use for over half of a century. The low DC gain (β) in vertical Silicon BJTs makes them a not promising choice for applications in power electronics because complicated base drivers are needed for the high continuous base current This is set to change with emergence of the 4H-SiC BJTs which enable a significantly higher DC current gain (β) [1]. This is referred to as the high-level injection (HLI) in the base area with a large concentration of both electrons and holes This significantly reduces the base resistance to allow a larger on-state current density and a lower on-state voltage drop. It is reported [9], [10] that the DC current gain is reduced under the same circumstance resulting in a low efficiency of the base driver.

MODELLING ANALYSIS

DC CURRENT GAIN

RESULT

CONCLUSION