Abstract
Semipolar (202¯1) plane InxGa1−xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x=0.11 to ∼30 ns for x≈0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.
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