Abstract
We investigated the threshold voltage (VTH) shift in p-GaN gate AlGaN/GaN power HEMTs under both forward and reverse gate bias conditions at different temperatures. With increasing forward gate bias, the VTH first positively shifted and then decreased. While at the reverse gate bias, VTH shifts monotonically increased towards the positive direction. Positive VTH shifts were due to electron trapping while its decrease was attributed to the optical pumping by the internal electroluminescence (EL). The EL emission from the p-GaN gate region was captured. A light illumination test was performed to verify the effectiveness of optical pumping.
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