Abstract
The effects of boron penetration on device performance and reliability of p +-poly PMOSFETs are investigated extensively with different RTA drive-in conditions. High drive-in temperature causes significant boron-penetration induced mobility degradation in P-MOSFETs, resulting degraded device performance. Boron penetration enhances charge trapping in oxide and interface state generation at Si SiO 2 interfaces under FN stress. Gate oxide reliability and device lifetime in the PMOSFETs due to this degradation are systematically studied.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
