Impact of Band Alignment on Line Electron Density and Channel Capacitance of Rectangular n-Channel Gate-All-Around Wire Field-Effect Transistor

Abstract

In this paper, we apply a finite-difference-method-based mathematical scheme to simulate one-dimensional electron transport, where the parabolic band is assumed to be in the reciprocal lattice space, with arbitrary band orientation. In order to examine the validity of the theoretical scheme, we calculate wave functions of the one-dimensional electron system on a specific semiconductor surface, which has the nondiagonal component of the effective mass tensor in Schrödinger's equation. It is demonstrated that the anisotropic nature of the electron wave function is successfully reproduced with a negligibly small error in comparison with the exact analytical solutions. We characterize the surface orientation dependence of the line electron density and channel capacitance for various rectangular gate-all-around field-effect transistors (FETs). We also address the impact of the specific surface orientation of a semiconductor device on device performance.