Abstract
In this study, numerical simulation has been executed using Solar Cell Capacitance Simulator (SCAPS-1D) to study the prospect of favourable efficiency and stable CdS/CdTe cell in various cell configurations. A basic structure of CdS/CdTe cell is studied with 4 μm CdTe as absorber layer, 100 nm tin oxide (SnO2) as front contact and 25 nm cadmium sulfides (CdS) as buffer layer. Four back surface fields (BSF) layers namely ZnTe, ZnTe: Cu, Cu2Te and MoTe2 are investigated to reduce the minority carrier recombination at back contact. The cell structure of glass/SnO2/CdS/CdTe/MoTe2 has shown a nearly ohmic contact with CdTe with the highest efficiency of 17.02% (Voc=0.91 V, Jsc=24.79 mA/cm2, FF=75.41). Simulation results have verified that MoTe2 as BSF layer is appropriate for an efficient CdS/CdTe cell. Moreover, it is found that a few nanometres (about 40 nm) of BSF layer are enough to achieve high efficiency. For MoTe2 layer, more than 17% efficiency has been achieved compared to other BSF layers.
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