Abstract
We investigated the effect of the B2H6 plasma treatment on p-type hydrogenated amorphous silicon (p-a-Si:H) surfaces for high-performance silicon heterojunction (SHJ) solar cells. Secondary ion mass spectroscopy measurements revealed that the boron concentration at the p-a-Si:H surface is increased by employing the B2H6 plasma treatment. Furthermore, specific contact resistance is decreased by about one-third after the B2H6 plasma treatment. No degradation of passivation performance is induced by the B2H6 plasma treatment. The power conversion efficiency of the SHJ solar cells with the B2H6 plasma treatment is improved by the increase in fill factor (FF) due to decreased series resistance and increased shunt resistance. From numerical simulations, the upward band bending is enhanced at the heterointerface between transparent conductive oxide (TCO) and p-a-Si:H by the B2H6 plasma treatment, which is responsible for the improved FF owing to facilitated tunneling holes from c-Si to p-a-Si:H layers and the TCO/p-a-Si:H heterointerface.
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