Impact of Attractive Ion in Undoped Channel on Characteristics of Nanoscale Multigate Field Effect Transistors: A Three-Dimensional Nonequilibrium Green's Function Study

Abstract

A rigorous simulation study of the impact of a single attractive ion in undoped channel multigate field-effect transistors is presented using a new three-dimensional nonequilibrium Green's function technique. A single donor induces threshold voltage shift, and its impact is most significant when the donor is located at the top of the potential barrier. On the other hand, on-current is not affected so much because of the electrostatic screening by the electron bound around the positively charged ion. To reduce the intrinsic device parameter fluctuation, a gate-all-around structure has better robustness than the double gate structure.