Abstract
Ion implantation is explored as potent approach for tuning the optoelectrical properties of semiconducting thin films via controlled defect engineering. This present study investigates the 180 keV argon (Ar+) ion implantation on the cadmium sulfide (CdS) nanorod mesh; synthesized via chemical bath deposition (CBD) method. X-ray diffraction (XRD) analysis supports the consistency of hexagonal phase even after implantation, but variation in the intensity of diffraction planes is noted. Field emission scanning electron microscopy (FESEM) scans are recorded to examine the implantation effect on the surface morphology. Implantation induces lattice disorder that resulted decrease in band gap energy from 2.39 eV to 2.08 eV and the corresponding green-yellow-red emission bands are discussed in photoluminescence (PL) spectra.
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