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Abstract
The influence of Ar addition to SF 6 /O 2 gas mixtures has been investigated for inductively coupled plasma (ICP) etching of SiC with a view to improve both etch rate and etched surface microstructure. SiC etch rates have been studied as a function of Ar concentration, gas flow rates, applied ICP power, chuck power and chamber pressure. SiC etch rate, surface morphology, surface chemistry and etch profiles obtained in SF 6 /O 2 /Ar gas mixtures have been compared with those of SiC-etched in SF 6 /O 2 gas mixtures under similar conditions. It was found that, compared with SF 6 /O 2 (4:1) ICP-etched SiC in our studies, smoother surfaces and significant reduction of fluorine-related etch residues can be obtained by optimum Ar addition. SiC etch rate in SF 6 /O 2 gas mixtures can be increased by over 5% with optimum Ar%. The highest SiC etch rate achieved here is approximately 500 nm/min in SF 6 /O 2 /Ar gas mixtures. The influence of Ar addition on the SiC etch profile has also been studied.
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