Abstract
AbstractThe impact of antimony doping on the formation of vacancy‐ and interstitial‐type microdefects in Czochralski silicon is studied by growing test crystals with different Sb doping levels, in the range from 0 (undoped) to 3 × 1018 cm–3, and with different pulling rates. Antimony is found to cause a shift from interstitial‐ to vacancy‐type microdefects, observable already at a concentration of ≈1017 cm–3. The shift coefficient K for antimony is estimated to be 7.2 × 10–19 cm3. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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