Abstract
The present study investigates the effect of annealing on In3Se2/Cu2Se/In3Se2 sandwich structure deposited by thermal evaporation technique for CIS solar cells. The X-ray diffraction pattern reveals that annealing improves the crystallinity and the formation of CIS composites cross section SEM image the uniform distribution of crysatllite spread over entire substrate. Also a clear distinguished between subsequent layer is visible from the image. Photoluminescence (PL) study shows the formation of Cu2Se–In2Se composites. The Energy band gap value calculated for as deposited films is 2.49eV and same upon annealing splitted into 1.57, 1.96eV after annealing at 150° which is evident from UV visible spectrographs.
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