Impact of ambient temperature and thermal resistance on device performance of junctionless silicon-nanotube FET

Abstract

In this article, a comprehensive analysis of the impact of electrothermal characteristics in the junctionless silicon-nanotube (Si-NT) field-effect-transistors is carried out using the Sentaurus TCAD. The combined study of the variation in thermal contact resistance (1 × 10−9 to 1 × 10−8 m2 W K−1), ambient temperature (300–400 K), and spacer length (5–20 nm) are performed. Significant improvements are observed in carrier temperature by 14%, lattice temperature by 13.7%, and gate leakage current from 0.787 nA to 0.218 fA due to the change in the spacer length. Further, a change in the drain current of 25.6% for thermal resistance (R th) and of 11.62% due to ambient temperature is observed. We also show that the junctionless device suffers significantly less from self-heating effects because of the electric field intensity, which is much lower in the channel region.