Abstract
AlO-doped ZnO nanocrystalline thin films from with nano crystallite size in the range (19-15 nm) were fabricated by pulsed laser deposition technique. The reduction of crystallite size by increasing of doping ratio shift the bandgap to IR region the optical band gap decreases in a consistent manner, from 3.21to 2.1 eV by increasing AlO doping ratio from 0 to 7wt% but then returns to grow up to 3.21 eV by a further increase the doping ratio. The bandgap increment obtained for 9% AlO dopant concentration can be clarified in terms of the Burstein–Moss effect whereas the aluminum donor atom increased the carrier's concentration which in turn shifts the Fermi level and widened the bandgap (blue-shift). The engineering of the bandgap by low concentration of AlO dopant makes ZnO: AlO thin films favorable for the fabrication of optoelectronic devices. The optical constants were calculated and was found to be greatly affected by the increasing the doping ratio.
Highlights
ZnO bandgap technology provides continuous development of transparent photonic devices, transparent.electronics and transparent electrodes. [1,2,3]
The estimated crystallite size using Debye-Scherer relation varies from growing up to 19 nm as AlO was introduced to the host oxide but it reached lower value of 15 nm at the doping ratio of 7%wt
The increase in bandgap occurred only on sample 9wt % AlO because stoichiometry is unchanged in pulsed laser deposition, which was used in this study, as a result, the concentration of dopant in the films was the same as in the starting content
Summary
ZnO bandgap technology provides continuous development of transparent photonic devices, transparent.electronics and transparent electrodes. [1,2,3]. In dye-sensitized solar cells, a transparent conducting layer of doped ZnO nano-film is used [7]. Apart from studying the structure and surface of the film, doping impact on optical properties such as transmission, bandgap, and optical constants, is the primary subject of this research paper.
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