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Abstract
The impacts of Mg, SrO or BaO capping, alkali earth oxides, into La2O3 MOS devices have been examined. A roll-off characteristic in flat-band voltage (Vfb) dependence on equivalent oxide thickness (EOT) has been suppressed with Mg capping and incorporation. On the other hand, capping with SrO and BaO have showed roll-up characteristics below an EOT of 1.2 nm. The main reason can be considered as the change in the number of fixed charges. No notable change in leakage current (Jg) has been observed.
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