Abstract
Conductive tips in atomic force microscopy (AFM) can be used to localize field-enhanced metal-induced solid-phase crystallization (FE-MISPC) of amorphous silicon (a-Si:H) at room temperature down to nanoscale dimensions. In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals. First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared. After the FE-MISPC process, yielding both conductive and non-conductive nano-pits in the films, the second silicon layer at the boundary condition of amorphous and microcrystalline growth is deposited. Comparing AFM morphology and current-sensing AFM data on the first and second layers, it is observed that the second deposition changes the morphology and increases the local conductivity of FE-MISPC-induced pits by up to an order of magnitude irrespective of their prior conductivity. This is attributed to the silicon nanocrystals (<100 nm) that tend to nucleate and grow inside the pits. This is also supported by micro-Raman spectroscopy.
Highlights
Crystallization of amorphous silicon (a-Si:H) films is traditionally employed as an alternative method for producing large-area electronics such as displays and solar cells
The production of silicon nanocrystals has become increasingly important as they are attractive for nanoelectronic, optoelectronic, as well as biological applications [6]. They are produced in the form of the so-called micro-crystalline silicon thin films using chemical vapor deposition (CVD) [7,8] or by electrochemical etching of bulk monocrystalline silicon, yielding the so-called porous silicon [9]
The a-Si:H films are deposited by plasma-enhanced CVD in a thickness of 170 nm (±30 nm, measured by a stylus profilometer) on a Corning 7059 glass substrate coated with 40-nm-thin nickel film and 10 nm titanium interlayer for improved adhesion to glass
Summary
Crystallization of amorphous silicon (a-Si:H) films is traditionally employed as an alternative method for producing large-area electronics such as displays and solar cells. It is typically induced by laser [1] or high-temperature furnace annealing [2]. The production of silicon nanocrystals has become increasingly important as they are attractive for nanoelectronic, optoelectronic, as well as biological applications [6] They are produced in the form of the so-called micro-crystalline silicon thin films using chemical vapor deposition (CVD) [7,8] or by electrochemical etching of bulk monocrystalline silicon, yielding the so-called porous silicon [9]. Producing the nanocrystals in well-defined locations or creating arranged microscopic patterns still remains a challenging task
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