Abstract
The electro-reflectance spectra, including their polarization dependencies were analyzed for n-Si(110) in the energy range of 2.9-3.8 eV. Based on the optical anisotropy of electro-optical effect, two contributions originated from a surface, (isotropic part relates to the linear electro-optical effect which inherent for (110) surface) and bulk, (anisotropic part relates to the Franz–Keldysh effect) were identified and separated. The presence of such extreme is explained by the zero value of the electron wave function on the surface and (or) the structure gettering of the free carriers.
Highlights
The thickness of skin-layer, forming the electroreflectance signal which inherent for the direct band-toband transitions, is determined by the two characteristic lengths, LD (LTF ), and d
Utilization of the modulation spectroscopy of the electro-reflectance gives a possibility of the structural analysis of the sample surfaces, their quality, including the identification of the effect of the chemical and physical processing on the surface state
The high carrier concentrations facilitate the separation between bulk and surface contributions in the electroreflectance signal, as a result, to study the surface impact in details
Summary
Impact of a Surface on the Electro-Reflectance Spectra of n-Si(110) and their Polarization Anisotropy. The electro-reflectance spectra, including their polarization dependencies were analyzed for n-Si(110) in the energy range of 2.9 - 3.8 eV. Based on the optical anisotropy of electro-optical effect, two contributions originated from a surface, (isotropic part relates to the linear electro-optical effect which inherent for (110) surface) and bulk, (anisotropic part relates to the Franz–Keldysh effect) were identified and separated. The presence of such extreme is explained by the zero value of the electron wave function on the surface and (or) the structure gettering of the free carriers.
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