Impact of a Kelvin Source Connection on Discrete High Power SiC-MOSFETs

Abstract

Standard packages like the TO-247-3L impose a strong restriction on the performance of SiC-transistors. The limitation arises predominantly from the common source inductance LS that is shared between the gate loop and the load circuit. To avoid this parasitic influence, advanced packages like the TO-247-4L or TO-263-7L offering a Kelvin source connection have been introduced. In this work, the influence of a Kelvin source connection on the switching behavior of a high power SiC-MOSFET is investigated.