Impact of 0.25 [micro sign]m dual gate oxide thickness CMOS process on flicker noise performance of multifingered deep-submicron MOS devices

Abstract

The flicker noise performance of 0.25 µm thin gate oxide transistors from the dual gate oxide thickness process and the single gate oxide thickness process have been evaluated and compared. A total of 20 transistors have been measured. The results reveal that thin gate oxide transistors from the dual gate oxide thickness process show a maximum of an order reduction in the current noise spectra. This reduction can be attributed to the lower nitrogen concentration peak at the Si/SiO2 interface. Hence the dual gate oxide thickness process will be the state-of-the-art for the implementation of system-on-chip designs. In general, the low-frequency noise behaviour of the fabricated deep-submicrometre MOSFETs is best described by the number fluctuation with correlated mobility fluctuation model.