Abstract
A method of deriving accurate values for impact ionization threshold energies in semiconductors from realistic band structures is described. The method is applied to two different band structures for both Si and Ge. The sensitivity of the various thresholds to the precise details of the band structure is thereby investigated, and reliable information on the thresholds in these materials is obtained. In most cases it is found that impact ionization can take place when the hot electron has an excess energy not much greater than the energy gap. This is in agreement with the conclusions of Anderson and Cromwell based on less accurate values of threshold energies calculated by a different method. Threshold energies derived from approximate band models are discussed in relation to the results for the genuine bands. It is found that the lowest thresholds are not provided correctly by such models.
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