Abstract

Correct knowledge of impact ionization in semiconductors is an essential ingredient for precise analyses and predictions of device characteristics such as reliability and degradation. In particular, as the device size shrinks into deep-submicron regime, energy dependence of the impact ionization rate in low energy regions (below 3 eV) plays a much more important role than the cases in bulk.1 This is because, in addition to an obvious reason that such ultra-small devices are to be operated at reduced applied voltages, the so-called nonlocal effects are so pronounced inside devices that many impact ionization events are actually induced by the electrons with energy below 3 eV (near threshold energy). Therefore, the ionization rate near threshold is of crucial importance for the investigations of hot carrier effects in ultra-small devices.

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