Abstract
Graded band diode structures for generation in long wave part of terahertz range are proposed. Low intensive impact ionization is used as a way to improve of frequency properties of transfer electron devices (TED). InzGa1-zAs-based graded band structures with the active region length of a 0.5 – 1.2 µm are considered. Ensemble Monte-Carlo Technique (EMC) is carried out to describe dynamics of the charge carriers in the devices. The direct current and high frequency diode characteristics are considered. Electromagnetic wave generation in frequencies up to 300 GHz have been shown. Designing problems of impact ionization-based TED are discussed. It is shown that localized impact ionization can be an energy relaxation mechanism.
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