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Abstract
Electron and hole impact ionization coefficients in (100)Ga0.5In0.5P have been measured by photomultiplication measurements. The ratio of hole to electron ionization coefficients, β/α, is shown to decrease from 2 to 1 when the electric field is increased from 3.5×105 to 6.5×105 V/cm. As confirmation, breakdown voltages were measured for several p+−n−−n+ diodes with various concentrations in the n− region. The values observed showed good agreement with those calculated from the ionization coefficients. Typical breakdown voltages are on the order of 1.6 times higher than those expected for GaAs.
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