Impact ionization and real-space transfer of minority carriers in charge injection transistors

C Tedesco,E Zanoni,C Canali,M Manfredi,M Mastrapasqua,A.Y Cho,S Luryi,D.L Sivco

doi:10.1109/55.320973

Impact ionization and real-space transfer of minority carriers in charge injection transistors

C Tedesco, E Zanoni + Show 6 more

https://doi.org/10.1109/55.320973

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Journal: IEEE Electron Device Letters	Publication Date: Oct 1, 1994
Citations: 4

Affiliation: University of Parma, AT&T (United States)

#Charge Injection Transistor #Effective Carrier Temperature + Show 8 more

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Abstract

High electric fields in the channel of InGaAs-InAlAs heterostructure complementary charge injection transistor give rise to impact ionization and real-space transfer of minority holes from the channel. These phenomena are investigated by measuring light emission in the 1.1-3.1 eV energy range for different points on the electrical characteristics. The effective carrier temperature, determined from the exponential tails of electroluminescence spectra, is 2100 K in the channel and 450 K in the barrier.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

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