Abstract
It is, by now, well known that McIntyre's localized carrier-multiplication theory cannot explain the suppression of excess noise factor observed in avalanche photodiodes (APDs) that make use of thin multiplication regions. We demonstrate that a carrier multiplication model that incorporates the effects of dead space, as developed earlier by Hayat et al. provides excellent agreement with the impact-ionization and noise characteristics of thin InP, In/sub 0.52/Al/sub 0.48/As, GaAs, and Al/sub 0.2/Ga/sub 0.8/As APDs, with multiplication regions of different widths. We outline a general technique that facilitates the calculation of ionization coefficients for carriers that have traveled a distance exceeding the dead space (enabled carriers), directly from experimental excess-noise-factor data. These coefficients depend on the electric field in exponential fashion and are independent of multiplication width, as expected on physical grounds. The procedure for obtaining the ionization coefficients is used in conjunction with the dead-space-multiplication theory (DSMT) to predict excess noise factor versus mean-gain curves that are in excellent accord with experimental data for thin III-V APDs, for all multiplication-region widths.
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