Abstract
A model for recombination instability of a narrow-gap semiconductor in the freeze-out regime is investigated. It is shown that the thermal transition probability for the phonon-assisted generation and recombination of electrons from the excited donor states plays the dominant role for the occurence of the bistable states in the conduction electron density and the current instability among the various rate coefficients in the region of post-brakdown.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have