Impact excitation of the f–f emission in clusters Er–O in silicon

Abstract

The Er2O3 quantum dot (cluster) with dimensions about 1.2 nm in silicon is discussed as a possible source of the Er-related emission in Si:Er, O, excited by hot carriers in the light-emitting diodes under reverse bias. This quantum dot is represented as a spherical quantum well 1 eV in depth. The electron resonance level with energy about 0.8 eV above the bottom of the silicon conduction band plays the role of an electron trap. The energy of 1.6 eV hot electrons trapped by the Er–O cluster is transferred to excitation of the f shell of erbium.