Abstract
Impact ionization process in diamond under extremely high electric fields (EFs) has been investigated. The impact-ionization rate was calculated theoretically from Fermi's golden rule using the full band structure. It is found from Monte Carlo simulations that the impact ionization of carriers occurs at high EFs above 1×106 V/cm. The threshold EF for ionization is smaller for hole than for electron. Current(I)–voltage(V) characteristics measured for p-i-p diamond stacking structures revealed that I is approximately proportional to V2 with substantial electroluminescence at EFs higher than 5×106 V/cm, being in good agreement with the theoretically predicted values.
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