Abstract

Abstract We have used the technique of impact-collision ion-scattering spectrometry to study the in-plane geometry of the Si (111)−( 3 × 3 ) In surface. The In adatoms are generally presumed to lie in a threefold-symmetric hollow position, i.e. the H 3 site, of the Si(111) surface or in a threefold-symmetric position above a second-layer Si atom, i.e. the T 4 site. Total-energy calculations favor the T 4 site. Our ICISS polar-angle scans agree with the T 4 structural simulations. Separations of the In and Si layers, and the In-Si bond length have also been determined from our experimental data.

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