Impact analysis of vacancy defects on Analog/RF performance parameters of GNR FET

Abstract

The effects of vacancy defects, such as single vacancy defect (SVD) and di-vacancy defect (DVD) for low voltage, on the performance parameters of a dual-gated graphene nanoribbon (GNR) field-effect transistor (FET) are investigated and compared to an ideal GNR FET with no vacancy defect (zero vacancy). Self-consistent atomistic simulations are used to evaluate the performance parameters of the device based on the non-equilibrium Green's function (NEGF) formalism. Initially, the impact of vacancy defects on the analog and RF performance parameters is examined, and then a trade-off analysis is conducted between transistor efficiency and frequency. The results indicate that the di-vacancy device has the highest transconductance generation factor (TGF), output resistance, intrinsic gain, gate capacitance, power delay product, gain frequency product (GFP), and gain transfer frequency product (GTFP). In contrast, the highest transconductance value, transconductance frequency product (TFP) and cut-off frequency are obtained with the device without any vacancy defect.