Impact Analysis of Anti-Reflection Coating on P-i-N Solar Device

Abstract

AbstractIn this article, p-i-n solar have been simulated with SCAPS-1D solar photovoltaic device simulator to observe the effect of anti-reflecting coating over the p-i-n solar device. The device was constructed using AlGaAs. GaAs was used as P+ , P, i, n+, n-layer with changing doping in it. It is observed in the proposed design that there is a significant impact of this layer in p-i-n PV Device. In the p+-p-i-n-n+ device, 36.948% efficiency has been observed with anti-reflective coating. But without anti-reflective coating, it went down only at 24.3850%. Almost 12% variation with a layer. In the device of p+-p-i-n, 33.5399% efficiency has been observed with anti-reflective coating. In the device of p-i-n, 33.4215% efficiency has been observed with anti-reflective coating. But without anti-reflective coating, it went down only at 22.0723%. Almost 11% variation observed with a layer. So, it can be said that anti-reflecting coating reduces the loss and increases the efficiency of a p-i-n PV Device.KeywordsP-i-N PV deviceGaAs3–5 materialPhotovoltaicARCAnti-reflection coating