Imaging VLSI Cross Sections by Atomic Force Microscopy

Abstract

Imaging is an integral part of VLSI technology development and quality control in device manufacturing. We report a novel application of Atomic Force Microscopy to image VLSI cross sections of metallographically polished samples. The major advantage of this technique over conventional imaging techniques, such as Scanning or Transmission Electron Microscopy, is the higher resolution achievable in combination with higher throughput and an easy access to quantitative data, such as line widths or re-entrant angles. We observe a very good correlation of AFM VLSI cross section images, acquired in air, with those acquired by SEM and TEM.