Abstract
Spatially resolved x-ray diffraction is used to analyze the strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth (ELO) on SiO2-masked GaAs substrates. A downward tilt of ELO wings caused by their interaction with the mask is observed. The distribution of the tilt magnitude across the wings width is determined with micrometer-scale spatial resolution. A residual upward tilt originating from inhomogeneous Si dopant distribution in the ELO wing is found after mask removal. If a large area of the sample is studied, the technique provides precise information on the tilt of an individual wing and its distribution.
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