Abstract
Two-dimensional imaging of current filament patterns generated in homogeneousn-type GaAs during avalanche breakdown at low temperatures is reported. The self-generated formation and subsequent growth behavior of distinct single- and multifilament configurations could globally be visualized by means of a scanning electron microscope equipped with a liquid-helium stage. From local conductivity measurements in the smallest possible filaments (typical diameter of about 10 μm) carrier mobilities as high as about 4·106 cm2/Vs at 4.2 K were estimated. Such high-mobility filament channels may become interesting for applications in ultrafast electronic circuits.
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