Abstract
The local atomic structure of a Ga1−xMnxAs (x= 0.07) layer during the annealing process was studied by means of X-ray diffuse scattering. The difference between the pair-distribution functions before and after annealing indicated the fraction of atoms that changed concentration and identified them to be exclusively interstitial atoms at the centres of gallium and/or arsenic tetrahedra in the GaMnAs unit cell.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
