Abstract
Secondary electron (SE) imaging of planar doped n-type Si has been performed using low voltage (LV) and very low voltage scanning electron microscopy (VLVSEM). The effect of the surface contamination and the SE contrast mechanism has been investigated in two microscopes operated at two different vacuum conditions. SE imaging under conventional vacuum and ultra high vacuum (UHV) conditions with in situ cleaning of the sample surface enables one to identify the contribution of the surface adlayer on the SE contrast. Carrying out in situ thin metal film deposition experiments under UHV conditions validates the proposed contrast mechanism at very low voltages. Also it is reported that the SE contrast depends on the thickness of the surface layer as well as the electron beam voltage used for SE imaging.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Electron Spectroscopy and Related Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
